Application No./Patent No.: 201710046400X Application date: January 22, 2017.
Inventor/Designer: Jiang Yaohua, Zheng Beirong, Wang Quan, Xue Yao, Xue Wei.
The invention discloses a back gate black phosphorus field effect transistor based on a PET flexible substrate, which is characterized by comprising a PET flexible substrate (1), an Au gate electrode (3), an HfO2 insulating layer (5) and a black phosphorus sheet (6) which are sequentially arranged; Au leakage report (7) and Au source electrode (8) are arranged on the black phosphor sheet (6), a PDMS layer (2) is arranged between the PET flexible substrate (1) and the Au grid wave (3), and a TiO2 buffer layer (4) is arranged between the Au grid wave (3) and the HfO2 insulating layer (5). The method not only ensures the performance with good output characteristics, but also has the advantages of easy process control and low cost.
