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    Research on the Key Technologies of GaN-based LED Surface Roughening Based on Ultrafast Laser.

    Published:2021-10-28

    Research on the Key Technologies of GaN-based LED Surface Roughening Based on Ultrafast Laser.

    Natural Science Foundation of Zhejiang Province


    Focus on exploring the influence of the size and quality of LED surface structure on the extraction efficiency of emergent light, and the influence of the temporal and spatial characteristics of ultrafast laser beam (wavelength, pulse width, single pulse energy, incident angle, polarization characteristics, etc.) on the etching depth and width, surface roughness, microstructure accuracy and physical and chemical characteristics of materials near the surface after coarsening LED emergent surface, master the technological mechanism and control methods of coarsening LED emergent surface by ultrafast laser, and establish the escape model of emergent light under the roughened microstructure surface. The completion of this project will provide an important technical support for the large-scale production of high-efficiency GaN-based LED.


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